Approaching the robust linearity in dual-floating van der Waals photodiode

Abstract

Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 μs. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

arXiv comment29 pages, 5 figures in the main text, 12 figures and 2 tables in the supporting information

References in corpus (5)

• Observation of tightly bound trions in monolayer MoS2
• Graphene photodetectors for high-speed optical communications
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics
• Tunable linearity of high-performance vertical dual-gate vdW phototransistor