Vertically-oriented MoS${}_2$ nanosheets for nonlinear optical devices

Abstract

Transition metal dichalcogenides such as MoS${}_2$ represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS${}_2$ (v-MoS${}_2$) nanosheets could be advantageous as compared to conventional horizontal MoS${}_2$ (h-MoS${}_2$) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS${}_2$ limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS${}_2$ nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of Sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS${}_2$ nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices.

Manuscript: 23 pages, 5 figures Supporting information: 9 pages, 6 figures

References in corpus (3)

• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Nanoscale chiral valley-photon interface through optical spin-orbit coupling