Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
arXiv:2102.03756 · doi:10.1038/s41928-021-00686-7
Abstract
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits.
arXiv comment34 pages, 16 figures
References in corpus (24)
- Berry Phase Effects on Electronic Properties
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Anomalous Hall effect
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Valley contrasting physics in graphene: magnetic moment and topological transport
- The Valley Hall Effect in MoS2 Transistors
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Wave-packet dynamics in slowly perturbed crystals: Gradient corrections and Berry-phase effects
- Detecting Topological Currents in Graphene Superlattices
- Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
- Electrical control of the valley Hall effect in bilayer MoS2 transistors
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Valley depolarization due to inter- and intra-valley electron-hole exchange interactions in monolayer MoS
- Interlayer excitons and Band Alignment in MoS/hBN/WSe van der Waals Heterostructures
- Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
- Brightened spin-triplet interlayer excitons and optical selection rules in van der Waals heterobilayers
- Microsecond dark-exciton valley polarization memory in 2D heterostructures
- Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenide
- Carrier-Resolved Photo Hall Measurement in World-Record-Quality Perovskite and Kesterite Solar Absorbers
- Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Mapping
- Circular photogalvanic effect in 2D van der Waals heterostructure
Cited by in corpus (3)
- Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors
- Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures
- Intermediates of Forming Transition Metal Dichalcogenide Heterostructures Revealed by Machine Learning Simulations