337 citations · 760 across the 11 of their papers we have counts for
11 papers
Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator
Jian Tang, Thomas Siyuan Ding, Shuhan Ding +24
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise…
Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer
Disheng Chen, Kevin Dini, Abdullah Rasmita +7
Long-life interlayer excitons (IXs) in transition metal dichalcogenide (TMD) heterostructure are promising for realizing excitonic condensates at high temperatures. Critical to thi…
Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer
Jian Tang, Thomas Siyuan Ding, Hongyu Chen +25
The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin…
Electronic ratchet effect in a moiré system: signatures of excitonic ferroelectricity
Zhiren Zheng, Xueqiao Wang, Ziyan Zhu +17
Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectric…
Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer
Hongbing Cai, Abdullah Rasmita, Qinghai Tan +15
Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. H…
Layer Hall effect in a 2D topological Axion antiferromagnet
Anyuan Gao, Yu-Fei Liu, Chaowei Hu +33
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At…
Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
Chongyun Jiang, Abdullah Rasmita, Hui Ma +7
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature,…
Layer engineered interlayer excitons
Qinghai Tan, Abdullah Rasmita, Si Li +6
Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D t…
Room temperature interlayer exciton valley polarization and valley Hall effect
Zumeng Huang, Yuanda Liu, Kévin Dini +5
For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-de…
Microsecond dark-exciton valley polarization memory in 2D heterostructures
Chongyun Jiang, Weigao Xu, Abdullah Rasmita +4
Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics device…
Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2
Chongyun Jiang, Fucai Liu, Jorge Cuadra +5
Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the…