156 citations · 534 across the 14 of their papers we have counts for
14 papers
AI-Assisted Hyperspectral Interferometry and Single-Cell Dispersion Imaging
Kamyar Behrouzi, Tanveer Ahmed Siddique, Megan Teng +3
Interferometry techniques are essential for extracting phase information from optical systems enabling precise measurements of dispersion and highly sensitive detection of perturba…
Interpretable inverse-designed cavity for on-chip nonlinear and quantum optics
Zhetao Jia, Wayesh Qarony, Jagang Park +9
Inverse design is a powerful tool in wave-physics and in particular in photonics for compact, high-performance devices. To date, applications have mostly been limited to linear sys…
Programmable quantum emitter formation in silicon
K. Jhuria, V. Ivanov, D. Polley +12
Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long sp…
Quantum emitter formation dynamics and probing of radiation induced atomic disorder in silicon
Wei Liu, Vsevolod Ivanov, Kaushalya Jhuria +9
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color cent…
All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
Walid Redjem, Yertay Zhiyenbayev, Wayesh Qarony +10
Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it h…
Disordered topological graphs enhancing nonlinear phenomena
Zhetao Jia, Matteo Seclì, Alexander Avdoshkin +4
Complex networks play a fundamental role in understanding phenomena from the collective behavior of spins, neural networks, and power grids to the spread of diseases. Topological p…
Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
Vsevolod Ivanov, Jacopo Simoni, Yeonghun Lee +10
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers…
Defect engineering of silicon with ion pulses from laser acceleration
Walid Redjem, Ariel J. Amsellem, Frances I. Allen +27
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals wit…
Scalable single-mode Berkeley Surface Emitting Lasers
Rushin Contractor, Wanwoo Noh, Walid Redjem +1
The scaling of electromagnetic apertures is a long-standing question that has been investigated for at least six decades but has still not been resolved [1-5]. The size of single a…
Enhancement of optical forces at bound state in the continuum
Haoye Qin, Walid Redjem, Boubacar Kante
Light-actuated motors, vehicles, and even space sails have drawn tremendous attention for basic science and applications in space, biomedical, and sensing domains. Optical bound st…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…