211 citations · 732 across the 14 of their papers we have counts for
14 papers
Insights into the need for ab-initio calculations to accurately predict the optical properties of metallic carbon nanotubes based on experimental confrontation
Domitille Baux, Patrick Hermet, Stéphane Campidelli +3
In this article, we conduct comparative studies on the optical properties of metallic carbon nanotubes. Firstly, we compare the complex dielectric constant predicted by an analytic…
On the concept of a generalized law of refraction: A phenomenological model The Article and the Supporting Informations
Emmanuel Rousseau, Didier Felbacq
This paper presents investigations on the generalized laws of refraction and reflection for metasurfaces made of diffractive elements. It introduces a phenomenological model that r…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…
Rigorous asymptotic study of the screened electrostatic potential in a thin dielectric slab
Didier Felbacq, Emmanuel Rousseau
The screened Coulomb potential plays a crucial role in the binding energies of excitons in a thin dielectric slab. The asymptotic behavior of this potential is studied when the thi…
Reply to "The equivalence of the Power-Zineau-Woolley picture and the Poincar{é} gauge from the very first principles" by G. K{ó}nya, et al
Emmanuel Rousseau, Didier Felbacq
This note is a reply to the paper arXiv:1801.05590: "The equivalence of the Power-Zineau-Woolley picture and the Poincar{é} gauge from the very first principles" by G. K{ó}nya, et…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…