2 citations · 2 across the 1 of their papers we have counts for
3 papers
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Ali Jaffal, Philippe Regreny, Gilles Patriarche +2
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth proc…
Density-controlled growth of vertical InP nanowires on Si(111) substrates
Ali Jaffal, Philippe Regreny, Nicolas Chauvin +1
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…