32 citations · 64 across the 10 of their papers we have counts for
10 papers
Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth
Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4
In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…
Covering a surface with pre-stressed ribbons : from theory to nano-structures fabrication
Alexandre Danescu, Philippe Regreny, Pierre Cremillieu +2
The paper deals with the fabrication of nano-shells from pre-stressed nano-plates release. Due to geometrical and technological restrictions we have to cover a given surface with t…
Hexagonal germanium grown by molecular beam epitaxy on self-assisted GaAs nanowires
I. Dudko, T. Dursap, A. D. Lamirand +8
Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the f…
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Ali Jaffal, Philippe Regreny, Gilles Patriarche +2
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth proc…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Density-controlled growth of vertical InP nanowires on Si(111) substrates
Ali Jaffal, Philippe Regreny, Nicolas Chauvin +1
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy…