Single InAsP/InP quantum dots as telecommunications-band photon sources

Abstract

The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the spectra display sharp distinct peaks resulting from the discrete electron-hole states in the dots, while in the long-wavelength range (above 1.45 $\mu$m), these sharp peaks lie on a broad spectral background. In both regions, cascade emission observed by time-resolved photoluminescence confirms that the quantum dots possess discrete exciton and multi-exciton states. Single photon emission is reported for the dots emitting at 1.3 $\mu$m through anti-bunching measurements.

References in corpus (5)

• Quantum nature of a strongly-coupled single quantum dot-cavity system
• Entangled Photon Pairs from Semiconductor Quantum Dots
• Temporal Monitoring of Non-resonant Feeding of Semiconductor Nanocavity Modes by Quantum Dot Multiexciton Transitions
• Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots
• Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Cited by in corpus (2)

• Higher-order photon correlations in pulsed photonic crystal nanolasers
• InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon