59 citations · 207 across the 9 of their papers we have counts for
10 papers
Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
Hugo Quard, Mario Khoury, Andong Wang +9
The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we…
Hexagonal germanium grown by molecular beam epitaxy on self-assisted GaAs nanowires
I. Dudko, T. Dursap, A. D. Lamirand +8
Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the f…
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Ali Jaffal, Philippe Regreny, Gilles Patriarche +2
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth proc…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Density-controlled growth of vertical InP nanowires on Si(111) substrates
Ali Jaffal, Philippe Regreny, Nicolas Chauvin +1
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…