59 citations · 207 across the 9 of their papers we have counts for
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Hexagonal germanium grown by molecular beam epitaxy on self-assisted GaAs nanowires
I. Dudko, T. Dursap, A. D. Lamirand +8
Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the f…
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Ali Jaffal, Philippe Regreny, Gilles Patriarche +2
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth proc…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Optical and electronic properties in ferroelectric barium titanate-based compounds
Ingrid C. Infante, Halyna Volkova, Pascale Gemeiner +9
The bandgap energy values for the ferroelectric BaTiO3-based solid solutions with isovalent substitution Ba1-x SrxTiO3, BaZrxTi1-xO3 and BaSnxTi1-xO3 were determined using diffuse…