6 citations · 6 across the 2 of their papers we have counts for
4 papers
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)
Marco Vettori, Alexandre Danescu, Xin Guan +3
In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam ep…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…
Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction
A. Letoublon, V. Favre-Nicolin, H. Renevier +5
We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs),…