51 citations · 95 across the 7 of their papers we have counts for
7 papers
Wetting of Ga droplets in SiO/Si cavities: Application to self-assisted GaAs nanowire growth
Louis Bailly-Salins, Marco Vettori, Thomas Dursap +4
In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations…
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring
Ali Jaffal, Philippe Regreny, Gilles Patriarche +2
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth proc…
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
T. Dursap, M. Vettori, C. Botella +7
The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. In this work, we present a method to select and…
Density-controlled growth of vertical InP nanowires on Si(111) substrates
Ali Jaffal, Philippe Regreny, Nicolas Chauvin +1
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy…
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)
Marco Vettori, Alexandre Danescu, Xin Guan +3
In this work we show that the incidence angle of group-III elements fluxes plays a significant role on the diffusion-controlled growth of III-V nanowires (NWs) by molecular beam ep…
InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon
Ali Jaffal, Walid Redjem, Philippe Regreny +8
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secu…