Tuning the exciton g-factor in single InAs/InP quantum dots

Abstract

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.

References in corpus (2)

• Entangled Photon Pairs from Semiconductor Quantum Dots
• Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $\mu$m entangled photon emitter

Cited by in corpus (8)

• A site-controlled quantum dot system offering both high uniformity and spectral purity
• Scalable qubit architecture based on holes in quantum dot molecules
• Measurement of g-factor tensor in a quantum dot and disentanglement of exciton spins
• Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
• Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots
• Magnetoexcitons in transition-metal dichalcogenides monolayers, bilayers, and van der Waals heterostructures
• Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm
• Layer-Dependent Spin Properties of Charge Carriers in Vertically Coupled Telecom Quantum Dots