A site-controlled quantum dot system offering both high uniformity and spectral purity

Abstract

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.

12 pages, 3 figures

References in corpus (2)

• Review: Semiconductor Quantum Light Sources
• Tuning the exciton g-factor in single InAs/InP quantum dots

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• Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity
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• Exciton-Polariton Trapping and Potential Landscape Engineering
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• Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
• Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots
• Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
• Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy
• Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates