Transient and self-limited nanostructures on patterned surfaces

Abstract

Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the vertical axis of the template. We describe a theoretical scheme that reproduces the experimentally-observed time-dependent behavior of this process, including the evolution of the recess and the increase of Ga incorporation along the base of the template to stationary values determined by alloy composition and other growth parameters. Our work clarifies the interplay between kinetics and geometry for the development of self-ordered nanostructures on patterned surfaces, which is essential for the reliable on-demand design of confined systems for applications to quantum optics.

References in corpus (3)

• A site-controlled quantum dot system offering both high uniformity and spectral purity
• Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures
• Semiconductor nanostructures engineering: Pyramidal quantum dots

Cited by in corpus (4)

• Conditions for entangled photon emission from (111)B site-controlled Pyramidal quantum dots
• Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses
• Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation
• Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates