Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
arXiv:1604.02985 · doi:10.1063/1.4919362
Abstract
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature, concentration, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of InGaAs quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of InGaAs nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.
arXiv comment9 pages, 8 figures
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- Self-ordered nanostructures on patterned substrates: Experiment and theory of metalorganic vapor-phase epitaxy of V-groove quantum wires and pyramidal quantum dots
- Statistical study of stacked/coupled site-controlled pyramidal quantum dots and their excitonic properties
- Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
- Self-aligned pillar arrays embedding site-controlled single quantum dots for enhanced non-classical light emission