Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

Abstract

This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation posi-tion and the dimensions of the confined structures onto the sub-strate. The fundamental steps of substrate patterning and the QD forma-tion mechanism are described together with a discussion of the structural particulars. The post-growth processes, including sur-face etching and substrate removal, which are required to facili-tate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.

References in corpus (1)

• A site-controlled quantum dot system offering both high uniformity and spectral purity

Cited by in corpus (6)

• Quantum dots for photonic quantum information technology
• Engineering of selective carrier injection in patterned arrays of single-quantum-dot entangled photon light-emitting diodes
• Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses
• Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
• Semiconductor nanostructures engineering: Pyramidal quantum dots
• Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots