Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27μeV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

ICMOVPE 2010 Proceeding

References in corpus (4)

• Quantum Communication
• A site-controlled quantum dot system offering both high uniformity and spectral purity
• Bell-inequality violation with a triggered photon-pair source
• Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

Cited by in corpus (4)

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• The importance of overcoming MOVPE surface evolution instabilities for >1.3 $\mu$m metamorphic lasers on GaAs
• Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS