Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses

Abstract

A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Secondly, the formation of a formerly unidentified type of InGaAs nanostructures - three corner quantum dots - is demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects.

References in corpus (14)

• Quantum Computing
• Review: Semiconductor Quantum Light Sources
• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Few-Particle Effects in Semiconductor Quantum Dots: Observation of Multi-Charged-Excitons
• Towards quantum dot arrays of entangled photon emitters
• Coherence of an Entangled Exciton-Photon State
• Symmetric quantum dots as efficient sources of highly entangled photons
• A site-controlled quantum dot system offering both high uniformity and spectral purity
• Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
• Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures
• Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
• From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots
• Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity
• Transient and self-limited nanostructures on patterned surfaces

Cited by in corpus (8)

• Conditions for entangled photon emission from (111)B site-controlled Pyramidal quantum dots
• Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation
• Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
• Statistical study of stacked/coupled site-controlled pyramidal quantum dots and their excitonic properties
• Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
• Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
• Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets
• Self-aligned pillar arrays embedding site-controlled single quantum dots for enhanced non-classical light emission