The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

Abstract

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.

4 pages, 3 figures

References in corpus (9)

• Single-shot read-out of an individual electron spin in a quantum dot
• Spin relaxation and decoherence of holes in quantum dots
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• Spin states and persistent currents in mesoscopic rings: spin-orbit interactions
• Spin properties of single electron states in coupled quantum dots
• Orbital and spin relaxation in single and coupled quantum dots
• Tuning of the spin-orbit interaction in a quantum dot by an in-plane magnetic field
• Manipulation of single electron spin in a GaAs quantum dot through the application of geometric phases: The Feynman disentangling technique
• Spin relaxation in diluted magnetic semiconductor quantum dots

Cited by in corpus (5)

• Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings
• Gate control of Berry phase in III-V semiconductor quantum dots
• Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
• Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects
• Tuning of the hole spin relaxation time in single self-assembled In${}_{1-x}$Ga${}_x$As/GaAs quantum dots by electric field