8 citations · 13 across the 6 of their papers we have counts for
6 papers
Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
Ding-Ming Huang, Jun-Hang Liu, Han Gao +10
Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have im…
Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface
Jian-Huan Wang, Ding-Ming Huang, Han Gao +3
A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, whi…
Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions
Han Gao, Jian-Huan Wang, Ji-Yin Wang +2
We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam e…
Atomically resolved electron reflectivity at a metal/semiconductor interface
Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…
Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…
Strain effects in twisted spiral antimonene
Ding-Ming Huang, Xu Wu, Kai Chang +4
van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation…