Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Abstract

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.

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Cited by in corpus (37)

• The germanium quantum information route
• Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power
• Recent advances in hole-spin qubits
• Silicon quantum dot devices with a self-aligned second gate layer
• Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Hole spin qubits in thin curved quantum wells
• Planar Josephson junctions in germanium: Effect of cubic spin-orbit interaction
• Charge-noise induced dephasing in silicon hole-spin qubits
• Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
• Zero field splitting of heavy-hole states in quantum dots
• Majorana zero modes in gate-defined germanium hole nanowires
• Majorana bound states in germanium Josephson junctions via phase control
• Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors
• Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
• Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Hole spin in tunable Ge hut wire double quantum dot
• Vanishing Zeeman energy in a two-dimensional hole gas
• Low-energy subband wave-functions and effective $g$-factor of one-dimensional hole gas
• Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Interband contributions to nonlinear transport in semiconductor nanostructures
• Low-energy hole subband dispersions in a cylindrical Ge nanowire: the effects of the nanowire growth direction
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction
• Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
• Two-band description of the strong `spin'-orbit coupled one-dimensional hole gas in a cylindrical Ge nanowire
• Longitudinal coupling between electrically driven spin-qubits and a resonator
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Hole subband dispersions and strong `spin'-orbit coupling in a cylindrical Ge nanowire
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots
• Searching strong `spin'-orbit coupled one-dimensional hole gas in strong magnetic fields