Fractional Quantum Hall Effect in Tilted Magnetic Fields
arXiv:1410.5874 · doi:10.1103/PhysRevB.91.045113
Abstract
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like.
References in corpus (18)
- Non-Abelian Anyons and Topological Quantum Computation
- Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene
- Evidence for a Bilayer Quantum Wigner Solid
- Observation of a Fractional Quantum Hall State at in a Wide GaAs Quantum Well
- Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells
- Quantum Hall Phase Diagram of Second Landau-level Half-filled Bilayers: Abelian versus Non-Abelian States
- Quantum Hall Phase Diagram of Half-filled Bilayers in the Lowest and the Second Orbital Landau Levels: Abelian versus Non-Abelian Incompressible Fractional Quantum Hall States
- Phase Diagrams for the = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells
- Interaction-tuned compressible-to-incompressible phase transitions in the quantum Hall systems
- Fractional quantum Hall effects in bilayers in the presence of inter-layer tunneling and charge imbalance
- Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing
- Fractional quantum Hall state at ν=1/4 in a wide quantum well
- Fractional Quantum Hall Effect at in Hole Systems Confined to GaAs Quantum Wells
- When are the fractional quantum Hall states stable?
- Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface
- Subband Engineering Even-Denominator Quantum Hall States
- Vertical Confinement and Evolution of Reentrant Insulating Transition in the Fractional Quantum Hall Regime
- Two-Component Fractional Quantum Hall Effect in the Half-Filled Lowest Landau Level in an Asymmetric Wide Quantum Well
Cited by in corpus (18)
- Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4
- Geometric Resonance of Composite Fermions near Bilayer Quantum Hall States
- Theory of Generalized Landau Levels and Implication for non-Abelian States
- Topological phase transition between composite-fermion and Pfaffian daughter states near ν = 1/2 FQHS
- Origin of the fractional quantum Hall effect in wide quantum wells
- Observation of An Anisotropic Wigner Crystal
- Anisotropic composite fermions and fractional quantum Hall effect
- Paired fermions in strong magnetic fields and daughters of even-denominator Hall plateaus
- Microwave spectroscopic observation of a Wigner solid within the 1/2 fractional quantum Hall effect
- Unusual Landau Level Pinning and Correlated Quantum Hall Effect in Hole Systems Confined to Wide GaAs Quantum Wells
- Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system
- Search for Composite Fermions at Filling Factor 5/2: Role of Landau Level and Subband Index
- Collective excitations of quantum Hall states under tilted magnetic field
- Composite fermions in a wide quantum well in the vicinity of the filling factor 1/2
- Non-Abelian quantum Hall state in Valence Band Hole Liquid
- Fractional quantum Hall state at with energy gap up to 6 K, and possible transition from one- to two-component state
- Wigner solids of wide quantum wells near Landau filling
- Edge reconstruction of compressible Quantum Hall fluid in the filling fraction range 1/3 to 2/3