Geometric Resonance of Composite Fermions near Bilayer Quantum Hall States

Abstract

Via the application of parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells, and study the geometric resonance of composite fermions (CFs) with a periodic density modulation in our samples. The measurements reveal that CFs exist close to bilayer quantum Hall states, formed at Landau level filling factors $\nu =1$ and 1/2. Near $\nu =1$, the geometric resonance features are consistent with half the total electron density in the bilayer system, implying that CFs prefer to stay in separate layers and exhibit a two-component behavior. In contrast, close to $\nu =1/2$, CFs appear single-layer-like (single-component) as their resonance features correspond to the total density.

Accepted for publication in Phys. Rev. Lett

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• Fractional Quantum Hall State at Filling Factor $\nu =1/4$ in Ultra-High-Quality GaAs 2D Hole Systems
• Geometric Resonance of Four-Flux Composite Fermions
• Origin of the $\nu =1/2$ fractional quantum Hall effect in wide quantum wells
• Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system
• Developing fractional quantum Hall states at even-denominator fillings 1/6 and 1/8
• Effect of picosecond magnetic pulse on dynamics of electron's subbands in semiconductor bilayer nanowire
• Single-parameter variational wavefunctions for quantum Hall bilayers
• Fractional quantum Hall state at $\nu =1/2$ with energy gap up to 6 K, and possible transition from one- to two-component state
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• Interplay of superconducting, metallic, and crystalline states of composite fermions at $\nu =1/6$ in wide quantum wells
• Interlayer-correlated fractional quantum Hall state in a trilayer electron system