Room temperature Purcell enhanced single erbium ions in silicon-carbide-on-insulator microring resonators

Abstract

Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants (${\text{Er}}^{3+}$) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology. In this work, we demonstrate fully integrated single-photon emission from an ion implanted ${\text{Er}}^{3+}$-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the ${\text{Er}}^{3+}$-defect, we achieved a $\sim$70$\times$ Purcell enhancement and recorded small spectral diffusion of $\sim$54 MHz. We further characterize the ${\text{Er}}^{3+}$ single photon emission via photon correlation g${}^{(2)}$-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.

10 pages, 4 figures