Integration of ${\text{Er}}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface

Abstract

Erbium (${\text{Er}}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^{\text{4}}{\text{I}}_{\text{13/2}}$ $\to$ ${}^{\text{4}}{\text{I}}_{\text{15/2}}$ transition at 1.54 $\mu$m. Additionally they are promising candidates for future quantum technologies when embedded in thin-film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate ${\text{Er}}^{3+}$ emitters in SOI metasurfaces made of closely spaced array of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the ${\text{Er}}^{3+}$ transition in SOI and could be adopted in similar technologically advanced materials.

10 pages, 5 figures

References in corpus (9)

• A photonic integrated circuit based erbium-doped amplifier
• Erbium-Implanted Materials for Quantum Communication Applications
• Purcell enhancement of single-photon emitters in silicon
• Narrow optical transitions in erbium-implanted silicon waveguides
• Robust millisecond coherence times of erbium electron spins
• Erbium emitters in commercially fabricated nanophotonic silicon waveguides
• Silicon Carbide Metasurfaces for Controlling the Spontaneous Emission of Embedded Color Centers
• Luminescence thermometry based on photon emitters in nanophotonic silicon waveguides
• Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics