Integration of ${\text{Er}}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface

Abstract

Erbium (${\text{Er}}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^{\text{4}}{\text{I}}_{\text{13/2}}$ $\to$ ${}^{\text{4}}{\text{I}}_{\text{15/2}}$ transition at 1.54 $\mu$m. Additionally they are promising candidates for future quantum technologies when embedded in thin-film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate ${\text{Er}}^{3+}$ emitters in SOI metasurfaces made of closely spaced array of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the ${\text{Er}}^{3+}$ transition in SOI and could be adopted in similar technologically advanced materials.

arXiv comment10 pages, 5 figures

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