300 citations · 1.4k across the 25 of their papers we have counts for
26 papers
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Damiano Ricciarelli, Giovanni Mannino, Ioannis Deretzis +10
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increas…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…
Rotation of polarization of light propagating through a gas of molecular super-rotors
Ilia Tutunnikov, Uri Steinitz, Erez Gershnabel +4
We present a detailed theoretical and experimental study of the rotation of the plane of polarization of light traveling through a gas of fast-spinning molecules. This effect is si…
Detection of single W-centers in silicon
Yoann Baron, Alrik Durand, Péter Udvarhelyi +13
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts…
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Lasing in Group-IV materials
V. Reboud, D. Buca, H. Sigg +6
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for…