300 citations · 1.4k across the 25 of their papers we have counts for
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Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud, A. Gassenq, N. Pauc +13
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For i…
Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors
S. Mukherjee, N. Kodali, D. Isheim +5
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-ass…
Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires
Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne +4
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engi…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…