activity
20042026
most citedEngineering near infrared single photon emitters in ultrapure silicon carbide

255 citations · 1.9k across the 37 of their papers we have counts for

collaborators

37 papers

quant-ph2026★ 40 cited

Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization

Daniel Wirtitsch, Georg Wachter, Sarah Reisenbauer +6

We propose and experimentally demonstrate a method to strongly increase the sensitivity of spin measurements on nitrogen-vacancy (NV) centers in diamond, which can be readily imple…

quant-ph2024★ 6 cited

Quantum communication networks with defects in silicon carbide

Philipp Sohr, Philipp Koller, Sebastian Ecker +23

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…

quant-ph2024★ 8 cited

Remote sensing of a levitated superconductor with a flux-tunable microwave cavity

Philip Schmidt, Remi Claessen, Gerard Higgins +9

We present a cavity-electromechanical system comprising a superconducting quantum interference device which is embedded in a microwave resonator and coupled via a pick-up loop to a…

quant-ph2023★ 35 cited

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot +11

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencie…

quant-ph2022★ 57 cited

High-Q magnetic levitation and control of superconducting microspheres at millikelvin temperatures

Joachim Hofer, Rudolf Gross, Gerard Higgins +11

We report the levitation of a superconducting lead-tin sphere with 100 micrometer diameter (corresponding to a mass of 5.6 micrograms) in a static magnetic trap formed by two coils…

quant-ph2022★ 5 cited

Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

T. Astner, P. Koller, C. M. Gilardoni +6

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, sever…