4 papers
Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien +6
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor indus…
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin +14
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of th…
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…