294 citations · 771 across the 9 of their papers we have counts for
9 papers
Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot +11
Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencie…
Exhaustive characterization of modified Si vacancies in 4H-SiC
Joel Davidsson, Rohit Babar, Danial Shafizadeh +4
The negatively charged silicon vacancy () in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of en…
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien +6
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor indus…
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin +14
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of th…
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Roland Nagy, Matthias Niethammer, Matthias Widmann +14
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…
Quantum properties of dichroic silicon vacancies in silicon carbide
Roland Nagy, Matthias Widmann, Matthias Niethammer +12
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed pro…