294 citations · 771 across the 9 of their papers we have counts for
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cond-mat.mes-hall2021★ 1 cited
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
cond-mat.mes-hall2019★ 95 cited
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin +14
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of th…