activity
20122025
most citedIntrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

134 citations · 146 across the 5 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2025

Probing Remote Nuclear Magnetic Moments in hBN with VB Electron Spin

G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov +6

Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made,…

cond-mat.mtrl-sci2025

Influence of 14N hyperfine interaction on electron nuclear double resonance of boron vacancy in hexagonal boron nitride

G. V. Mamin, E. V. Dmitrieva, F. F. Murzakhanov +3

The research focuses on the explanation of a phenomenon observed in the spectra of electron nuclear resonance (ENDOR) pertaining to nitrogen atoms adjacent to the boron vacancy (VB…

cond-mat.mtrl-sci202412 cited

14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study

F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +6

The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei…

cond-mat.mtrl-sci2021

Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride

Andreas Gottscholl, Matthias Diez, Victor Soltamov +6

Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered n…

cond-mat.mtrl-sci2013

Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova +2

The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can exte…

cond-mat.mtrl-sci2012134 cited

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

F. Fuchs, V. A. Soltamov, S. Vaeth +4

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength o…