Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states

Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova +2

The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can exte…