210 citations · 1.4k across the 20 of their papers we have counts for
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Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…
Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
V. A. Soltamov, B. V. Yavkin, A. N. Anisimov +4
High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an…
Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
Harpreet Singh, Andrei N. Anisimov, I. D. Breev +2
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important preconditio…
Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
Harpreet Singh, Andrei N. Anisimov, Sergei S. Nagalyuk +3
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting propertie…