activity
20162022
most citedOptical thermometry based on level anticrossing in silicon carbide

115 citations · 302 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2022★ 1 cited

Identification of different silicon vacancy centers in 6H-SiC

Harpreet Singh, Andrei N. Anisimov, Pavel G. Baranov +1

Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exist…

quant-ph2021★ 2 cited

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

I. D. Breev, Z. Shang, A. V. Poshakinskiy +11

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon…

cond-mat.mtrl-sci2020★ 21 cited

Stress-controlled zero-field spin splitting in silicon carbide

I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…

cond-mat.mtrl-sci2020★ 18 cited

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5

We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…

quant-ph2020★ 11 cited

Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

Harpreet Singh, Andrei N. Anisimov, I. D. Breev +2

Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important preconditio…

quant-ph2020★ 25 cited

Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC

Harpreet Singh, Andrei N. Anisimov, Sergei S. Nagalyuk +3

Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting propertie…

quant-ph2018★ 109 cited

Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution

V. A. Soltamov, C. Kasper, A. V. Poshakinskiy +7

Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qu…

cond-mat.mtrl-sci2016★ 115 cited

Optical thermometry based on level anticrossing in silicon carbide

A. N. Anisimov, D. Simin, V. A. Soltamov +4

We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…