56 citations · 118 across the 4 of their papers we have counts for
4 papers
Boron-related defects in n-type 4H-SiC Schottky barrier diodes
Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…
Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS
Tihomir Knežević, Tomislav Brodar, Vladimir Radulović +3
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E…
Silicon carbide diodes for neutron detection
José Coutinho, Vitor J. B. Torres, Ivana Capan +11
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from app…
Bright single photon sources in lateral silicon carbide light emitting diodes
Matthias Widmann, Matthias Niethammer, Takahiro Makino +7
Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and co…