56 citations · 118 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2023★ 7 cited
Boron-related defects in n-type 4H-SiC Schottky barrier diodes
Tihomir Knežević, Eva Jelavić, Yuichi Yamazaki +3
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy…
cond-mat.mtrl-sci2022★ 13 cited
Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS
Tihomir Knežević, Tomislav Brodar, Vladimir Radulović +3
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E…