activity
20142020
most citedPurcell enhancement of a single silicon carbide color center with coherent spin control

154 citations · 400 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics2020★ 37 cited

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Mena N. Gadalla, Andrew S. Greenspon, Rodrick Kuate Defo +2

The negatively charged silicon monovacancy in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-…

quant-ph2020★ 154 cited

Purcell enhancement of a single silicon carbide color center with coherent spin control

A. L. Crook, C. P. Anderson, K. C. Miao +9

Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addr…

cond-mat.str-el2019★ 9 cited

Weak ferromagnetic insulator with huge coercivity in monoclinic double perovskite La2CuIrO6

Xingyu Zhang, Bin Li, Jie Cheng +6

Insulating ferromagnets with high TC are required for many new magnetic devices. More complexity arises when strongly correlated 3d ions coexist with strongly spin-orbit coupled 5d…

cond-mat.mes-hall2016★ 124 cited

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

David O. Bracher, Xingyu Zhang, Evelyn L. Hu

Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal…

cond-mat.mes-hall2014★ 76 cited

Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity

Jonathan C. Lee, David O. Bracher, Shanying Cui +11

The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. F…