Purcell enhancement of a single silicon carbide color center with coherent spin control

Abstract

Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

13 pages, 4 figures

References in corpus (10)

• High-fidelity projective readout of a solid-state spin quantum register
• Coherent control of single spins in silicon carbide at room temperature
• High Quality factor photonic crystal nanobeam cavities
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Coherent spin control of a nanocavity-enhanced qubit in diamond
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Optical charge state control of spin defects in 4H-SiC
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
• Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity

Cited by in corpus (42)

• Semiconductor Qubits In Practice
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Optical parametric oscillation in silicon carbide nanophotonics
• Cavity quantum electrodynamics with color centers in diamond
• Silicon carbide for integrated photonics
• Room temperature single-photon emitters in silicon nitride
• Probing the coherence of solid-state qubits at avoided crossings
• Inverse-designed Silicon Carbide Quantum and Nonlinear Photonics
• Novel color center platforms enabling fundamental scientific discovery
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Zero-Added-Loss Entangled Photon Multiplexing for Ground- and Space-Based Quantum Networks
• Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Experimental Generation of Spin-Photon Entanglement in Silicon Carbide
• Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
• High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
• The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
• Bullseye dielectric cavities for photon collection from a surface-mounted quantum-light-emitter
• Laser writing and spin control of near infrared emitters in silicon carbide
• Hybrid microwave-optical scanning probe for addressing solid-state spins in nanophotonic cavities
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Visible and Near-infrared Microdisk Resonators on a 4H-Silicon-Carbide-on-Insulator Platform
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
• Qubit guidelines for solid-state spin defects
• Roadmap on Integrated Quantum Photonics
• Scalable construction of hybrid quantum photonic cavities
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• Octave-spanning microcomb generation in 4H-silicon-carbide-on-insulator photonics platform
• Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node
• Spin-photon Qubits for Scalable Quantum Network
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications