Optical parametric oscillation in silicon carbide nanophotonics

Abstract

Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can enable SiC integrated photonics with quality factors exceeding $10^7$. We fabricate microring resonators with quality factors as high as 1.1 million, and observe low-threshold (8.5 $\pm$ 0.5 mW) optical parametric oscillation as well as optical microcombs spanning 200 nm. Our demonstration is an essential milestone in the development of photonic devices that harness the unique optical properties of SiC, paving the way toward the monolithic integration of nonlinear photonics with spin-based quantum technologies.

5 pages, 3 figures

References in corpus (2)

• Microresonator Soliton Dual-Comb Spectroscopy
• Coherent control of single spins in silicon carbide at room temperature

Cited by in corpus (5)

• Applications of integrated optical microcombs
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Interpretable inverse-designed cavity for on-chip nonlinear and quantum optics
• Ultralow-threshold thin-film lithium niobate optical parametric oscillator
• Single-photon nonlinearities and blockade from a strongly driven photonic molecule