197 citations · 221 across the 7 of their papers we have counts for
7 papers
RF-free driving of nuclear spins with color centers in silicon carbide
Raphael Wörnle, Jonathan Körber, Timo Steidl +5
Color centers that enable nuclear-spin control without RF fields offer a powerful route towards simplified and scalable quantum devices. Such capabilities are especially valuable f…
Demonstration Of A Quantum Magnetometer Chip Based On Proprietary And Scalable 4H-Silicon Carbide Technology
P. A. Stuermer, D. Wirtitsch, T. Steidl +14
This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging waf…
Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
Marcel Krumrein, Julian M. Bopp, Timo Steidl +5
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters…
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…
The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
Di Liu, Florian Kaiser, Vladislav Bushmakin +7
The negatively-charged silicon vacancy center () in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication,…
Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
Charles Babin, Rainer Stöhr, Naoya Morioka +19
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication,…