187 citations · 222 across the 11 of their papers we have counts for
11 papers
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride
Song Li, Anton Pershin, Adam Gali
Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boro…
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk +14
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While common…
Quantum bit with telecom wave-length emission from a simple defect in Si
Peter Deák, Song Li, Adam Gali
Spin-to-photon interfaces from defects in silicon hold great promise towards realizing quantum repeaters with the combination of advanced semiconductor and photonics technologies.…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
Precise characterization of a silicon carbide waveguide fiber interface
Marcel Krumrein, Raphael Nold, Flavie Davidson-Marquis +13
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into effic…
Strain Engineering for Transition Metal Defects in SiC
Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…
Solid state defect emitters with no electrical activity
Pei Li, Song Li, Péter Udvarhelyi +2
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-ga…
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P. Udvarhelyi, T. Clua-Provost, A. Durand +6
The boron-vacancy spin defect () in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly p…
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
David J. Christle, Paul V. Klimov, Charles F. de las Casas +11
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…