187 citations · 222 across the 11 of their papers we have counts for
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cond-mat.mes-hall2023★ 2 cited
Strain Engineering for Transition Metal Defects in SiC
Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…
cond-mat.mtrl-sci2023★ 1 cited
Solid state defect emitters with no electrical activity
Pei Li, Song Li, Péter Udvarhelyi +2
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-ga…
quant-ph2023
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields
P. Udvarhelyi, T. Clua-Provost, A. Durand +6
The boron-vacancy spin defect () in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly p…