Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

Abstract

The negatively charged silicon vacancy center (SiV${}^{-}$) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV${}^{-}$ centers. We present a robust and scalable approach for creating individual, $\sim$50nm deep SiV${}^{-}$ with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445nm laser illumination that enables continuous photoluminescence excitation spectroscopy, without the need for any further charge stabilization or repumping. Our results constitute a key step towards the use of near-surface, optically coherent SiV${}^{-}$ for sensing under extreme conditions, and offer a powerful approach for stabilizing the charge-environment of diamond color centers for quantum technology applications.

arXiv comment15 pages, 13 figures including supplementary information

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Cited by in corpus (8)

• Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
• Wavelength dependence of nitrogen-vacancy center charge cycling
• Scalable construction of hybrid quantum photonic cavities
• Charge and Spin Dynamics and Destabilization of Shallow Nitrogen-Vacancy Centers under UV and Blue Excitation
• Many-Body Entanglement in Solid-State Emitters
• A Concise Primer on Solid-State Quantum Emitters
• Topical review on acousto-optical Floquet engineering of single-photon emitters
• Spin-photon Qubits for Scalable Quantum Network