Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers

Abstract

Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly-detected photo-luminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single crystal diamond.

References in corpus (3)

• Nanoscale magnetic imaging of a single electron spin under ambient conditions
• Initialization and Readout of Nuclear Spins via negatively charged Silicon-Vacancy Center in Diamond
• Optical patterning of trapped charge in nitrogen-doped diamond

Cited by in corpus (7)

• Optical activation and detection of charge transport between individual color centers in room-temperature diamond
• Fast wide-field quantum sensor based on solid-state spins integrated with a SPAD array
• Probing metastable space-charge potentials in a wide bandgap semiconductor
• Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
• Wavelength dependence of nitrogen-vacancy center charge cycling
• Quantum spin probe of single charge dynamics
• Probing charge dynamics in diamond with an individual color center