56 citations · 111 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2021★ 18 cited
The M-center in 4H-SiC is a carbon self-interstitial
J. Coutinho, J. D. Gouveia, T. Makino +5
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of ele…
physics.ins-det2020★ 56 cited
Silicon carbide diodes for neutron detection
José Coutinho, Vitor J. B. Torres, Ivana Capan +11
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from app…
cond-mat.mtrl-sci2019★ 37 cited
Acceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling
Ivana Capan, Tomislav Brodar, José Coutinho +3
We provide direct evidence that the broad Z peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged -SiC, has two compo…