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J. Hassan

3 papers hereh-index 232.4k citations87 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • quant-ph2
  • cond-mat.mes-hall1
same name
  • J. Hassan — 3 papers
  • J. Hassan — 1 paper
  • J. Hassan — 1 paper, h 7

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedStark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

81 citations · 81 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2019

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Matthias Niethammer, Matthias Widmann, Torsten Rendler +11

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an…

quant-ph2019

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

L. Spindlberger, A. Csóré, G. Thiering +7

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…

quant-ph2017★ 81 cited

Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Charles F. de las Casas, David J. Christle, Jawad Ul Hassan +3

Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scal…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.