activity
20142022
most citedIsolated electron spins in silicon carbide with millisecond-coherence times

482 citations · 1.2k across the 7 of their papers we have counts for

collaborators

7 papers

quant-ph2022★ 5 cited

Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

T. Astner, P. Koller, C. M. Gilardoni +6

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, sever…

cond-mat.mes-hall2019★ 86 cited

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

Matthias Niethammer, Matthias Widmann, Torsten Rendler +11

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an…

quant-ph2019★ 81 cited

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

L. Spindlberger, A. Csóré, G. Thiering +7

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…

quant-ph2018★ 294 cited

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Roland Nagy, Matthias Niethammer, Matthias Widmann +14

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…

quant-ph2017★ 81 cited

Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Charles F. de las Casas, David J. Christle, Jawad Ul Hassan +3

Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scal…

quant-ph2017★ 187 cited

Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface

David J. Christle, Paul V. Klimov, Charles F. de las Casas +11

The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…

cond-mat.mes-hall2014★ 482 cited

Isolated electron spins in silicon carbide with millisecond-coherence times

David J. Christle, Abram L. Falk, Paolo Andrich +6

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of…