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quant-ph2019
Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
L. Spindlberger, A. Csóré, G. Thiering +7
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…
quant-ph2017★ 81 cited
Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
Charles F. de las Casas, David J. Christle, Jawad Ul Hassan +3
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scal…