Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Abstract

Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects, and hinders their coupling to optical cavities. Here we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show both 975 nm and 1130 nm excitation can prepare its neutral charge state with near unity efficiency.

12 pages, 4 figures

References in corpus (4)

• The negatively charged nitrogen-vacancy centre in diamond: the electronic solution
• Optical charge state control of spin defects in 4H-SiC
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Optical switching of defect charge states in 4H-SiC

Cited by in corpus (5)

• Electrical control of lifetime-limited quantum emitters using 2D materials
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
• Optical and Strain Stabilization of Point Defects in Silicon Carbide