113 citations · 113 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
cond-mat.mtrl-sci2018★ 113 cited
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
D. A. Broadway, N. Dontschuk, A. Tsai +8
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precisi…